Study of Silicon Etching in HBr Solutions using a Scanning Electrochemical Microscope
نویسندگان
چکیده
The etching of silicon has been studied by the scanning electrochemical microscope (SECM) technique. Etching has been accomplished in acidic fluoride solutions by electrogenerating a strong oxidant, i.e. bromine in this case, at an ultramicroelectrode which was held closely above a silicon (1 11) wafer. The parameters that affect the process and control the efficiency of the silicon etching were examined. A detailed mechanism of the process, which was derived from the unique advantages of the SECM and is in agreement with previous reports, is proposed.
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